HM879, HM879_Hi - SILICON NPN EPITAXIAL TYPE TRANSISTOR

Hi-Sincerity Mocroelectronics

Datasheet Details

Part number	HM879, HM879_Hi
Manufacturer	Hi-Sincerity Mocroelectronics
File Size	26.22 KB
Description	SILICON NPN EPITAXIAL TYPE TRANSISTOR
Datasheet	HM879_Hi-SincerityMocroelectronics.pdf
Note	This datasheet PDF includes multiple part numbers: HM879, HM879_Hi. Please refer to the document for exact specifications by model.

For 1.5V And 3V Electronic Flash Use.

SOT-89.
Charger-up time is about 1 mS faster than of a germanium transistor.
Small saturation voltage can bring less power dissipation and flashing times. Absolute Maximum Ratings.
Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum.
Maximum Power Dissipation Total Power Dissipation (Ta=25°C) 1 W.
Maximum Voltages and Currents (Ta=25°C) BVCBO Collector to Base Voltage.

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Published: Mar 26, 2005 |