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HMBT4403, HMBT4403_Hi PNP Transistor

HMBT4403 Description

HI-SINCERITY MICROELECTRONICS CORP.Spec.No.: HE6818 Issued Date : 1993.06.30 Revised Date : 2002.10.25 Page No.: 1/4 HMBT4403 PNP EPITAXIAL PLAN.
The HMBT4403 is designed for general purpose applications requiring high breakdown voltages. Maximum Temp.

HMBT4403 Applications

* requiring high breakdown voltages. Absolute Maximum Ratings SOT-23
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C
* Maximum Power Dissipation Total Power Dissipation (Ta=25°C) 225 mW
* Maximum Voltages and Currents (Ta=25°C) VCBO Co

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This datasheet PDF includes multiple part numbers: HMBT4403, HMBT4403_Hi. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
HMBT4403, HMBT4403_Hi
Manufacturer
Hi-Sincerity Mocroelectronics
File Size
35.99 KB
Datasheet
HMBT4403_Hi-SincerityMocroelectronics.pdf
Description
PNP Transistor
Note
This datasheet PDF includes multiple part numbers: HMBT4403, HMBT4403_Hi.
Please refer to the document for exact specifications by model.

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PNP Transistor Hi-Sincerity Mocroelectronics
Hi-Sincerity Mocroelectronics HMBT4403-like datasheet