HMX1225
Description
The HMX1225/HMM1225 series silicon controlled rectifiers are high performance planner diffused PNPN devices. These parts are intended for low cost high volume applications.
Absolute Maximum Ratings (Ta=25°C)
Parameter Repetitive Peak Off State Voltage On-State Current Average On-State Current Peak Reverse Gate Voltage Peak Gate Current Gate Dissipation Operating Temperature Storage Temperature Soldering Temperature
Part No. HMX1225 HMM1225
Symbol VDRM VDRM IT(rms) IT(AV) VGRM
IGM PG(AV)
Tj Tstg Tsld
Min. Max. Unit 380
- V 300
- V 0.8
- A 0.5
- A
8-V 1-A 0.1
- W -40 125 °C -40 125 °C
- 250 °C
Test Conditions Tj=40°C to 125°C (RGK=1K) TC=40°C Half Cycle=180°,TC=40°C IGR=10u A 10us max 20ms max
1.6mm from case 10s max
Classification Of IGT
Rank HMX1225 HMM1225
A 10-23 u A 10-23 u A
C 17-55 u A 17-55 u A
Electrical Characteristics (Ta=25°C)
Parameter
Symbol Min Max Unit
Test Conditions
Off-State Leakage Current
IDRM
- 0.1 m A @VDRM (RGK=1K), Tj=125°C
Off-State...
