SFD7N65E
DESCRIPTION
These N-Channel enhancement mode power field effect transistors are produced using Hi-semicon’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
Features
- VDS(V)=650V, ID=7A
- RDS(ON) TYP:1.1Ω@VGS=10V ID=3.5A MAX:1.4Ω
Applications
- Power faction correction (PFC)
- Switched mode power supplies (SMPS)
- Uninterruptible power supply (UPS)
- LED lighting power
ORDERING INFORMATION
Part No. SFD7N65E
Package TO-252-2L
Marking SFD7N65E
Material Pb Free
Packing Reel
Http://.hi-semicon.
Rev 1.1 Page 1 of 11
ABSOLUTE MAXIMUM RATINGS (TJ=25C unless otherwise noted)
Characteristics
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