Part number:
1SS118
Manufacturer:
Hitachi Semiconductor
File Size:
41.59 KB
Description:
Silicon epitaxial planar diode.
* High average forward current. (I O = 200mA)
* High reliability with glass seal. Ordering Information Type No. 1SS118 Cathode band Black Mark S118 Package Code DO-35 Outline 1 S1 18 2 Type No. Cathode band 1. Cathode 2. Anode www.DataSheet4U.com 1SS118 Absolute Maximum Ratin
1SS118
Hitachi Semiconductor
41.59 KB
Silicon epitaxial planar diode.
📁 Related Datasheet
1SS110 - Silicon Diode
(Hitachi Semiconductor)
1SS110
Silicon Epitaxial Planar Diode for Tuner Band Switch
ADE-208-179B (Z) Rev. 2 Features
• Low forward resistance. (r f = 0.9 Ω max) • Suitable f.
1SS110 - Switching Diode
(Leshan Radio Company)
..
Switching Diode
*150mW DO-34 * Glass silicon switching diodes * We declare that the material of product pliance with RoHS requ.
1SS119 - Silicon Diode
(Hitachi Semiconductor)
1SS119
Silicon Epitaxial Planar Diode for High Speed Switching
ADE-208-180A (Z) Rev. 1 Aug. 1995 Features
• Low capacitance. (C = 3.0pF max) • Short .
1SS119 - Silicon Epitaxial Planar Diode
(Renesas)
1SS119
Silicon Epitaxial Planar Diode for High Speed Switching
REJ03G0564-0300 (Previous: ADE-208-180B) Rev.3.00 Mar 23, 2005
Features
• Low capacita.
1SS101 - SUPER HIGH SPEED SWITCHING DIODE
(XIN SEMICONDUCTOR)
XIN SEMICONDUCTOR
ISO9002
1SS101 THUR 1SS301
SUPER HIGH SPEED SWITCHING DIODE SPECIAL DESIGN FOR PROTECTING SOLAR BATTERY
FEATURES
For general purpo.
1SS101 - Mixer Diode
(NEC)
.
1SS104 - SILICON DIODE
(Toshiba Semiconductor)
.
1SS106 - Silicon Schottky Barrier Diode
(Hitachi Semiconductor)
1SS106
Silicon Schottky Barrier Diode for Various Detector, High Speed Switching
ADE-208-153A (Z) Rev. 1 Oct. 1998 Features
• Detection efficiency is.