Part number:
1SS119
Manufacturer:
Hitachi Semiconductor
File Size:
27.45 KB
Description:
Silicon diode.
* Low capacitance. (C = 3.0pF max)
* Short reverse recovery time. (trr = 3.5ns max)
* Small glass package (MHD) enables easy mounting and high reliability. Ordering Information Type No. 1SS119 Cathode band Light Blue Package Code MHD Outline 1 Cathode band 2 1. Cathode 2
1SS119
Hitachi Semiconductor
27.45 KB
Silicon diode.
📁 Related Datasheet
1SS110 - Silicon Diode
(Hitachi Semiconductor)
1SS110
Silicon Epitaxial Planar Diode for Tuner Band Switch
ADE-208-179B (Z) Rev. 2 Features
• Low forward resistance. (r f = 0.9 Ω max) • Suitable f.
1SS110 - Switching Diode
(Leshan Radio Company)
..
Switching Diode
*150mW DO-34 * Glass silicon switching diodes * We declare that the material of product pliance with RoHS requ.
1SS118 - Silicon Epitaxial Planar Diode
(Hitachi Semiconductor)
..
1SS118
Silicon Epitaxial Planar Diode for High Speed Switching
ADE-208-297 (Z) Rev. 0 Features
• High average forward current. (.
1SS119 - Silicon Epitaxial Planar Diode
(Renesas)
1SS119
Silicon Epitaxial Planar Diode for High Speed Switching
REJ03G0564-0300 (Previous: ADE-208-180B) Rev.3.00 Mar 23, 2005
Features
• Low capacita.
1SS101 - SUPER HIGH SPEED SWITCHING DIODE
(XIN SEMICONDUCTOR)
XIN SEMICONDUCTOR
ISO9002
1SS101 THUR 1SS301
SUPER HIGH SPEED SWITCHING DIODE SPECIAL DESIGN FOR PROTECTING SOLAR BATTERY
FEATURES
For general purpo.
1SS101 - Mixer Diode
(NEC)
.
1SS104 - SILICON DIODE
(Toshiba Semiconductor)
.
1SS106 - Silicon Schottky Barrier Diode
(Hitachi Semiconductor)
1SS106
Silicon Schottky Barrier Diode for Various Detector, High Speed Switching
ADE-208-153A (Z) Rev. 1 Oct. 1998 Features
• Detection efficiency is.