1SS270
Hitachi Semiconductor
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Silicon diode.
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1SS270 - SWITCHING DIODES
(Leshan Radio Company)
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1SS270 - Silicon Epitaxial Planar Diode
(Renesas)
1SS270
Silicon Epitaxial Planar Diode for High Speed Switching
REJ03G0566-0400 Rev.4.00
Sep 29, 2008
Features
• Low capacitance. (C = 3.0 pF max) • Sh.
1SS270A - HIGH SPEED SWITCHING DIODE
(EIC)
1SS270A
FEATURES :
• High switching speed: max. 3.5 ns • Continuous reverse voltage:max. 60 V • Peak reverse voltage:max. 70 V • Pb / RoHS Free
MECHAN.
1SS270A - Silicon Diode
(Hitachi Semiconductor)
1SS270A
Silicon Epitaxial Planar Diode for High Speed Switching
ADE-208-166A (Z) Rev. 1 Aug.1995 Features
• Low capacitance. (C = 3.0pF max) • Short .
1SS271 - Diode
(Toshiba Semiconductor)
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1SS272 - Silicon Epitaxial Planar Type Diode
(Toshiba Semiconductor)
TOSHIBA Diode Silicon Epitaxial Planar Type
1SS272
Ultra High Speed Switching Application
Low forward voltage
: VF (3) = 0.92V (typ.)
Fast reve.
1SS200 - Diode
(Toshiba Semiconductor)
TOSHIBA Diode Silicon Epitaxial Planar Type
1SS200
Ultra High Speed Switching Application
1SS200
Unit: mm
z Low forward voltage
: VF (3) = 0.92V (t.
1SS201 - Diode
(Toshiba Semiconductor)
TOSHIBA Diode Silicon Epitaxial Planar Type
1SS201
Ultra High Speed Switching Application
Low forward voltage
: VF (3) = 0.9V (typ.)
Fast reverse r.
1SS201 - SUPER HIGH SPEED SWITCHING DIODE
(XIN SEMICONDUCTOR)
XIN SEMICONDUCTOR
ISO9002
1SS101 THUR 1SS301
SUPER HIGH SPEED SWITCHING DIODE SPECIAL DESIGN FOR PROTECTING SOLAR BATTERY
FEATURES
For general purpo.
1SS220 - (1SS220 / 1SS221) SILICON SWITCHING DIODES
(NEC)
..
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