2SB1391
Hitachi Semiconductor
35.77 KB
Silicon pnp transistor.
2SB1391
Silicon PNP Triple Diffused
Application
Power switching
Outline
TO-220FM
2
1 1. Base 2. Collector 3. Emitter
12 3
2 kΩ (Typ)
200 Ω (Typ.
📁 Related Datasheet
2SB1390 - Silicon PNP Transistor
(Hitachi Semiconductor)
2SB1390
Silicon PNP Triple Diffused
Application
Low frequency power amplifier
Outline
TO-220FM
2
1 1. Base 2. Collector 3. Emitter ID 4 kΩ (Typ) 2.
2SB1390 - PNP Transistor
(INCHANGE)
isc Silicon PNP Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -60V(Min) ·High DC Current Gain-
: hFE= 1.
2SB1390 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
..
Product Specification
Silicon PNP Power Transistors
2SB1390
DESCRIPTION ·With TO-220Fa package ·High DC.
2SB139040ML - SCHOTTKY BARRIER DIODE
(Silan Microelectronics)
2SB139040ML
2SB139040ML SCHOTTKY BARRIER DIODE CHIPS
DESCRIPTION
Ø Ø Ø Ø Ø Ø 2SB139040ML is a schottky barrier diode chips
Lb
Low power losses, high .
2SB139060ML - SCHOTTKY BARRIER DIODE
(Silan Microelectronics)
2SB139060ML
2SB139060ML SCHOTTKY BARRIER DIODE CHIPS
DESCRIPTION
Ø Ø Ø Ø Ø Ø 2SB139060ML is a schottky barrier diode chips
Lb
Low power losses, high .
2SB1391 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
..
Product Specification
Silicon PNP Power Transistors
2SB1391
DESCRIPTION ·With TO-220Fa package ·High DC.
2SB1391 - PNP Transistor
(INCHANGE)
isc Silicon PNP Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -120V(Min) ·High DC Current Gain-
: hFE= .
2SB139100MA - LOW IR SCHOTTKY BARRIER DIODE
(Silan Microelectronics)
2SB139100MA
2SB139100MA LOW IR SCHOTTKY BARRIER DIODE CHIPS
DESCRIPTION
Ø Ø 2SB139100MA is a schottky barrier diode chips
Lb
Due to special schottky .
