2SH21 Overview
ADE 208 294 (Z) 2SH21 Silicon N-Channel IGBT 1st. 1995 Application High speed power switching.
2SH21 Key Features
- High speed switching
- Low on saturation voltage
| Part number | 2SH21 |
|---|---|
| Datasheet | 2SH21_HitachiSemiconductor.pdf |
| File Size | 43.71 KB |
| Manufacturer | Hitachi Semiconductor (now Renesas) |
| Description | N-Channel MOSFET |
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ADE 208 294 (Z) 2SH21 Silicon N-Channel IGBT 1st. 1995 Application High speed power switching.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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2SH21 | SILICON P EMITTER PLANAR TYPE TRANSISTOR | Toshiba |
See all Hitachi Semiconductor (now Renesas) datasheets
| Part Number | Description |
|---|---|
| 2SH20 | Silicon N-Channel IGBT |
| 2SH22 | N-Channel MOSFET |
| 2SH26 | N-Channel MOSFET |
| 2SH27 | N-Channel MOSFET |
| 2SH28 | N-Channel MOSFET |
| 2SH29 | N-Channel MOSFET |
| 2SH11 | Silicon N-Channel IGBT |
| 2SH12 | Silicon N-Channel IGBT |
| 2SH13 | Silicon N-Channel IGBT |
| 2SH14 | Silicon N-Channel IGBT |