2SK1400 Datasheet, mosfet equivalent, Hitachi Semiconductor

2SK1400 Features and benefits

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📁 Related Datasheet

2SK1400A - Silicon N-Channel MOSFET (Hitachi Semiconductor)
2SK1400, 2SK1400A Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low dri.

2SK1401 - Silicon N-Channel MOSFET (Hitachi Semiconductor)
2SK1401, 2SK1401A Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low dri.

2SK1401A - Silicon N-Channel MOSFET (Hitachi Semiconductor)
2SK1401, 2SK1401A Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low dri.

2SK1402 - Silicon N-Channel MOSFET (Hitachi Semiconductor)
2SK1402, 2SK1402A Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low dri.

2SK1402A - Silicon N-Channel MOSFET (Hitachi Semiconductor)
2SK1402, 2SK1402A Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low dri.

2SK1403 - Silicon N-Channel MOSFET (Hitachi Semiconductor)
2SK1403, 2SK1403A Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low dri.

2SK1403A - Silicon N-Channel MOSFET (Hitachi Semiconductor)
2SK1403, 2SK1403A Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low dri.

2SK1404 - Silicon N-Channel MOSFET (Hitachi Semiconductor)
2SK1404 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current.

2SK1405 - Silicon N-Channel MOSFET (Hitachi Semiconductor)
2SK1405 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current.

2SK1408 - N-Channel MOSFET Transistor (Inchange Semiconductor)
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=16A@ TC=25℃ ·Drain Source Voltage- : VDSS=450 (Min) ·Minimum Lot-to-Lot variations for.