3SK186 Silicon N-Channel Dual Gate MOS FET Application UHF TV tuner RF amplifier Outline MPAK-4 2 3 1 4 1.
Source 2.
Gate1 3.
Gate2 4.
Drain 3SK186 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 12 ±10 ±10 35 150 125 55 to +125 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C)
