Datasheet4U Logo Datasheet4U.com

3SK186 Datasheet - Hitachi Semiconductor

3SK186 Silicon N-Channel Dual Gate MOS FET

3SK186 Silicon N-Channel Dual Gate MOS FET Application UHF TV tuner RF amplifier Outline MPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain 3SK186 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 12 ±10 ±10 35 150 125 55 to +125 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) .

3SK186_HitachiSemiconductor.pdf

Preview of 3SK186 PDF
3SK186 Datasheet Preview Page 2 3SK186 Datasheet Preview Page 3

Datasheet Details

Part number:

3SK186

Manufacturer:

Hitachi Semiconductor

File Size:

31.93 KB

Description:

Silicon n-channel dual gate mos fet.

📁 Related Datasheet

3SK180 High-Frequency General-Purpose Amp Applications (Sanyo Semicon Device)

3SK181 N-Channel Enhancement MOS Silicon FET (Sanyo)

3SK184 GaAs N-Channel MES FET (Panasonic)

3SK189 UHF Amp/Mixer Applications (Sanyo Semicon Device)

3SK101 Silicon N-Channel Transistor (Toshiba)

3SK102 Silicon N-Channel Transistor (Toshiba)

3SK103 Silicon N-Channel MOSFET (ETC)

3SK113 GaAs N-Channel Dual Gate FET (Hitachi)

TAGS

3SK186 3SK186 Silicon N-Channel Dual Gate MOS FET Hitachi Semiconductor

3SK186 Distributor