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3SK186 Datasheet - Hitachi Semiconductor

3SK186 Silicon N-Channel Dual Gate MOS FET

3SK186 Silicon N-Channel Dual Gate MOS FET Application UHF TV tuner RF amplifier Outline MPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain 3SK186 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 12 ±10 ±10 35 150 125 55 to +125 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) .

3SK186 Datasheet (31.93 KB)

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Datasheet Details

Part number:

3SK186

Manufacturer:

Hitachi Semiconductor

File Size:

31.93 KB

Description:

Silicon n-channel dual gate mos fet.

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3SK186 Silicon N-Channel Dual Gate MOS FET Hitachi Semiconductor

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