HAT2045T
Features
- -
- - Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting
Outline
TSSOP- 8
65 34
1 D
8 D
4 G
5 G
S S 2 3
S S 6 7
MOS1
MOS2
1, 8 2, 3, 6, 7 4, 5
D Sou G
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR Pch Pch Tch Tstg
Note2 Note3 Note1
Ratings 28 ±12 6.0 48 6.0 1.0 1.5 150
- 55 to +150
Unit V V A A A W W °C °C
1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. 1 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s 3. 2 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s
Electrical Characteristics (Ta = 25°C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate...
