Download HAT2049T Datasheet PDF
Hitachi Semiconductor
HAT2049T
Features - - - - Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting Outline TSSOP- 8 65 34 12 1 5 8 D D D 4 G S S S S 2 3 6 7 1, 5, 8 Drain 2, 3, 6, 7 Source 4 Gate Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR Pch Tch Tstg Note2 Note1 Ratings 30 ± 12 8 64 8 1.3 150 - 55 to + 150 Unit V V A A A W °C °C 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s Electrical Characteristics (Ta = 25°C) Item Symbol Min 30 ± 12 - - 0.4 - - 13 - - - - - - - - - Typ - - - - - 0.013 0.017 20 1430 410 265 23 165 215 185 0.83 30 Max - - ± 0.1 1 1.4 0.017 0.025 - - - - - - - - 1.08 - Unit V V µA µA V Ω Ω S p F p F p F ns ns ns ns V ns IF = 8 A , VGS = 0 Note3 IF = 8 A, VGS = 0 di F/ dt = 20...