HL7851G

GaAlAs Laser Diode

Hitachi Semiconductor

HL7851G Features

* Visible light output: λp = 785 nm Typ Small beam ellipticity: 9.5:23 High output power: 50 mW (CW) Built-in monitor photodiode 173 HL7851G Absolute Maximum Ratings (TC = 25°C) Item Optical output power Pulse optical output power LD reverse voltage PD reverse

HL7851G General Description

www.DataSheet4U.com structure. It is suitable as a light source for optical disk memories, levelers and various other types of optical equipment. Hermetic sealing of the package assures high reliability. The HL7851G is a high power 0.78 µm band GaAlAs laser diode with a multi-quantum well (MQW) Fea.

HL7851G Datasheet (51.24 KB)