HN27C256AG-12 Datasheet PDF - Hitachi Semiconductor 32768-word x 8-bit UV Erasable and Programmable ROM Specs

HN27C256AG-12 - 32768-word x 8-bit UV Erasable and Programmable ROM

This page provides the datasheet information for the HN27C256AG-12, a member of the HN27C256AG 32768-word x 8-bit UV Erasable and Programmable ROM family.

Datasheet Summary

Description

This Hitachi HN27C256AG is a 256-kbit ultraviolet erasable and electrically programmable ROM, featuring high speed and low power dissipation.

Features

High speed Access time: 100/120/150 ns (max).
Low power dissipation Active mode: 25 mW (typ) (f = 1 MHz) Standby mode: 5 µW (typ).
High reliability and fast programming Programming voltage: +12.5 V DC Fast High-Reliability Programming Algorithm available.
Device identifier mode Manufacturer code and device code Ordering Information Type No. HN27C256AG-10 HN27C256AG-12 HN27C256AG-15 Access Time 100 ns 120 ns 150 ns Package 600-mil 28-pin cerdip (DG-28) Note:.

Datasheet Details

Part number	HN27C256AG-12
Manufacturer	Hitachi Semiconductor
File Size	185.79 KB
Description	32768-word x 8-bit UV Erasable and Programmable ROM
Datasheet	HN27C256AG-12 Datasheet
Additional preview pages of the HN27C256AG-12 datasheet.

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Full PDF Text Transcription

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HN27C256AG Series 32768-word × 8-bit UV Erasable and Programmable ROM Maintenance only Description This Hitachi HN27C256AG is a 256-kbit ultraviolet erasable and electrically programmable ROM, featuring high speed and low power dissipation. Fabricated on advanced fine process and high speed circuitry technique, the HN27C256AG makes high speed access time possible for 16 bit microprocessors such as the 8086 and 68000. And low power dissipation in active and standby modes matches our CMOS 256-kbit EPROM. In programming operation, the HN27C256AG realizes faster programming times than our conventional 256-kbit EPROM by Hitachi’s Fast High-Reliability Programming Algorithm.

Published: Jul 29, 2014 |