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HSB226YP - Silicon Schottky Barrier Diode

Hitachi Semiconductor

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Datasheet Details

Part number	HSB226YP
Manufacturer	Hitachi Semiconductor
File Size	23.52 KB
Description	Silicon Schottky Barrier Diode
Datasheet	HSB226YP_HitachiSemiconductor.pdf

HSB226YP Product details

Features

Low reverse current, Low capacitance.
CMPAK-4 Package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HSB226YP Laser Mark E5 Package Code CMPAK-4 Outline 4 3 1 2 1 2 3 4 Anode Anode Cathode Cathode (Top View) HSB226YP Absolute Maximum Ratings (Ta = 25°C) Item Repetitive peak reverse voltage Non-Repetitive peak forward surge current forward current Junction temperature Storage temperature Symbol VRRM Value 25 200 50 12.

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Published: Mar 26, 2005 |