K1622 - Silicon N-Channel MOS FET

Hitachi Semiconductor

Datasheet Details

Low on-resistance.
High speed switching.
Low drive current.
4 V gate drive device  Can be driven from 5 V source.
Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline November 1996 LDPAK 4 4 123 D 12 3 G S 1. Gate 2. Drain 3. Source 4. Drain 2SK1622(L), 2SK1622(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode rever.

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Published: Jul 11, 2016 |