K439 Datasheet - Hitachi Semiconductor

K439 2SK439

2SK439 Silicon N-Channel MOS FET Application VHF amplifier Outline SPAK 1 23 1. Gate 2. Source 3. Drain 2SK439 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Gate current Channel power dissipation Channel temperature Storage temperature Symbol VDS VGSS ID IG Pch Tch Tstg Ratings 20 ±5 30 ±1 300 150 55 to +150 Unit V V mA mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate cutoff cur.

K439-HitachiSemiconductor.pdf