MBM300A6
Hitachi Semiconductor
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Igbt module range with soft and fast (sfd) free-wheeling diodes.
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MBM300GS12AW - IGBT Module Silicon N-Channel IGBT
(Hitachi)
IGBT MODU ODULE
MBM300GS12AW
Silicon N-channel IGBT OUTLINE DRAWING
Unit in mm
FEAT RES EATURES * High speed and low saturation voltage. * low noise.
MBM30LV0032 - 32M (4M X 8) BIT NAND-type
(Fujitsu Media Devices)
FUJITSU SEMICONDUCTOR DATA SHEET
DS05-20884-2E
FLASH MEMORY
CMOS
32M (4M × 8) BIT NAND-type
MBM30LV0032
s DESCRIPTION
The MBM30LV0032 device is a .
MBM30LV0064 - 64M (8M X 8) BIT NAND-type
(Fujitsu Media Devices)
FUJITSU SEMICONDUCTOR DATA SHEET
DS05-20878-3E
FLASH MEMORY
CMOS
64M (8M × 8) BIT NAND-type
MBM30LV0064
s DESCRIPTION
The MBM30LV0064 device is a .
MBM30LV0128 - 128 M (16 M X 8) BIT NAND-type
(Fujitsu Media Devices)
FUJITSU SEMICONDUCTOR DATA SHEET
DS05-20885-1E
FLASH MEMORY
CMOS
128 M (16 M × 8) BIT NAND-type
MBM30LV0128
s DESCRIPTION
The MBM30LV0128 device i.
MBM200A6 - IGBT MODULE RANGE WITH SOFT AND FAST (SFD) FREE-WHEELING DIODES
(Hitachi Semiconductor)
.
MBM200GR12 - IGBT POWER MODULE
(Hitachi)
Hitachi IGBT Module / Silicon N-Channel IGBT
Spec. No. IGBT-SP-99024(R1)
MBM200GR12
[Rated 200A/1200V, Dual-pack type]
FEATURES
· Low saturation vo.
MBM200GR6 - IGBT POWER MODULE
(Hitachi)
Hitachi IGBT Module / Silicon N-Channel IGBT
Spec. No.IGBT-SP-99020(R1)
MBM200GR6
[Rated 200A/600V, Dual-pack type]
FEATURES
· Low saturation volta.
MBM200GS12AW - IGBT POWER MODULE
(Hitachi)
IGBT MODU ODULE
MBM200GS12AW
Silicon N-channel IGBT OUTLINE DRAWING
Unit in mm
94 80 16
E2
FEAT RES EATURES * High speed and low saturation voltage..
MBM200GS6AW - IGBT POWER MODULE
(Hitachi)
IGBT MODU ODULE
MBM200GS6AW
Silicon N-channel IGBT OUTLINE DRAWING
Unit in mm
94 4-Fast-on Terminal #110
G2 E2
FEAT RES EATURES * High speed and low.
MBM200JS12AW - IGBT POWER MODULE
(Hitachi)
IGBT MODU ODULE
MBM200JS12AW
Silicon N-channel IGBT OUTLINE DRAWING
Unit in mm
FEAT RES EATURES * High speed and low saturation voltage. * low noise.
