* High breakdown voltage and high current (VCEO = 120 V, I C = 25 A)
* Built-in C-E diode Outline TO-3P 2 1 1. Base 2. Collector (Flange) 3. Emitter ID 1 2 3 3 2SD2256 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to
D2256
Hitachi
31.96 KB
Silicon npn triple diffused.
2SD2256
Silicon NPN Triple Diffused
ADE-208-928 (Z) 1st. Edition Sep. 2000 Application
Low frequency power amplifier complementary pair with 2SB1494
.
📁 Related Datasheet
D2250 - 2SD2250
(Panasonic Semiconductor)
Power Transistors
2SD2250
Silicon NPN triple diffusion planar type Darlington
For power amplification Complementary to 2SB1490
φ 3.3±0.2 5.0±0.3 3.0
.
D2251 - 2SD2251
(Sanyo Semicon Device)
..
..
..
.
D2253UK - METAL GATE RF SILICON FET
(Seme LAB)
TetraFET
D2253UK
METAL GATE RF SILICON FET
MECHANICAL DATA
D B E
8 1 7 6 3 4 2
C
R A
F
5
Q O N M J K L
GOLD METALLISED MULTI-PURPOSE SILICON DMO.
D2254UK - METAL GATE RF SILICON FET
(Seme LAB)
TetraFET
D2254UK
METAL GATE RF SILICON FET
MECHANICAL DATA
B E D
8 1 7 6 3 4 2
C
R A
F
5
Q O N M J K L
GOLD METALLISED MULTI-PURPOSE SILICON DMO.
D2255 - Power Transistors
(Panasonic Semiconductor)
Power Transistors
2SD2255
Silicon NPN triple diffusion planar type Darlington
For power amplification Complementary to 2SB1493
s Features
q Optimum f.
D2256UK - METAL GATE RF SILICON FET
(Seme LAB)
TetraFET
D2256UK
ROHS COMPLIANT METAL GATE RF SILICON FET
MECHANICAL DATA
D
B E
8
7
6
F
5
O
J
K
L
1
2
R
3
4
C A
Q
N M
I P
H
G
DBC4 Pac.
D2200 - PNP/NPN Epitaxial Planar Silicon Transistors
(Sanyo)
Ordering number:EN3151
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1451/2SD2200
80V/5A Switching Applications
Features
· Surface mount type devi.
D2200N - Rectifier Diode
(Infineon)
N
Datenblatt / Data sheet
Netz-Gleichrichterdiode Rectifier Diode
D2200N
Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte /.
