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HE7601SG GaAlAs Infrared Emitting Diode

HE7601SG Description

www.DataSheet4U.com HE7601SG GaAlAs Infrared Emitting Diode ODE-208-996B (Z) Rev.2 Mar.2005 .
The HE7601SG is a 770 nm band GaAlAs infrared emitting diode with a double heterojunction structure.

HE7601SG Features

* High efficiency and high output power Package Type
* HE7601SG: SG1 Internal Circuit 1 2 HE7601SG Absolute Maximum Ratings (TC = 25°C) Item Forward current Reverse voltage Operating temperature Storage temperature Symbol IF VR Topr Tstg Value 250 3
* 20 to +60
* 40 t

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Datasheet Details

Part number
HE7601SG
Manufacturer
Hitachi
File Size
212.84 KB
Datasheet
HE7601SG_Hitachi.pdf
Description
GaAlAs Infrared Emitting Diode

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GaAlAs Infrared Emitting Diode Hitachi
Hitachi HE7601SG-like datasheet