HE7601SG GaAlAs Infrared Emitting Diode

Hitachi

Description

www.DataSheet4U.com HE7601SG GaAlAs Infrared Emitting Diode ODE-208-996B (Z) Rev.2 Mar.2005 .
The HE7601SG is a 770 nm band GaAlAs infrared emitting diode with a double heterojunction structure.

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Datasheet Specifications

Part number: HE7601SG
Manufacturer: Hitachi
File Size: 212.84 KB
Datasheet: HE7601SG_Hitachi.pdf
Description: GaAlAs Infrared Emitting Diode

Features

* High efficiency and high output power Package Type
* HE7601SG: SG1 Internal Circuit 1 2 HE7601SG Absolute Maximum Ratings (TC = 25°C) Item Forward current Reverse voltage Operating temperature Storage temperature Symbol IF VR Topr Tstg Value 250 3
* 20 to +60
* 40 t

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HE7601SG GaAlAs Infrared Emitting Diode Hitachi

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