HE7601SG - GaAlAs Infrared Emitting Diode

Hitachi

Datasheet Details

Part number	HE7601SG
Manufacturer	Hitachi
File Size	212.84 KB
Description	GaAlAs Infrared Emitting Diode
Datasheet	HE7601SG_Hitachi.pdf

The HE7601SG is a 770 nm band GaAlAs infrared emitting diode with a double heterojunction structure.

High efficiency and high output power Package Type.
HE7601SG: SG1 Internal Circuit 1 2 HE7601SG Absolute Maximum Ratings (TC = 25°C) Item Forward current Reverse voltage Operating temperature Storage temperature Symbol IF VR Topr Tstg Value 250 3.
20 to +60.
40 to +90 Unit mA V °C °C Optical and Electrical Characteristics (TC = 25°C) Item Optical output power Peak wavelength Spectral width Forward voltage Reverse current Capacitance Rise time Fall time Symbo.

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Published: Dec 30, 2006 |