K2334 - Silicon N-Channel MOS FET

Features

Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC-DC converter Avalanche Ratings Outline DPAK-2 4 4 1 1 D G 1. Gate 2. Drain 3. Source 4. Drain S 2 3 2 3 www. DataSheet4U. com 2SK2334(L), 2SK2334(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diod.

Hitachi

Datasheet Details

Part number	K2334
Manufacturer	Hitachi
File Size	85.65 KB
Description	Silicon N-Channel MOS FET
Datasheet	K2334 Datasheet
Additional preview pages of the K2334 datasheet.

📁 Similar Datasheet

K2333 - Power MOSFET (Shindengen)
K2312 - 2SK2312 (Toshiba Semiconductor)
K2312 - N-Channel 60V MOSFET (VBsemi)
K2313 - 2SK2313 (Toshiba Semiconductor)
K2313 - 2SK2313 (Toshiba Semiconductor)
K2314 - N-Channel 100-V MOSFET (VBsemi)
K2324 - 2SK2324 (Panasonic)
K2325TJ600 - Medium Voltage Thyristor (IXYS)
K2325TJ650 - Medium Voltage Thyristor (IXYS)
K2340 - 2SK2340 (Panasonic)

Other Datasheets by Hitachi

Full PDF Text Transcription

Click to expand full text

www.DataSheet4U.com 2SK2334(L), 2SK2334(S) Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC-DC converter Avalanche Ratings Outline DPAK-2 4 4 1 1 D G 1. Gate 2. Drain 3. Source 4. Drain S 2 3 2 3 www.DataSheet4U.com 2SK2334(L), 2SK2334(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes 1. PW≤10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25 °C 3.

Published: Aug 6, 2009 |