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K2334 Datasheet Silicon N-Channel MOS FET

Manufacturer: Hitachi Semiconductor (now Renesas)

Overview: www.DataSheet4U.com 2SK2334(L), 2SK2334(S) Silicon N-Channel MOS FET November 1996 Application High speed power.

Key Features

  • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC-DC converter Avalanche Ratings Outline DPAK-2 4 4 1 1 D G 1. Gate 2. Drain 3. Source 4. Drain S 2 3 2 3 www. DataSheet4U. com 2SK2334(L), 2SK2334(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diod.

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