MBM200GR12 - IGBT POWER MODULE

Product Overview

Hitachi

Part number	MBM200GR12
Manufacturer	Hitachi
File Size	66.65 KB
Description	IGBT POWER MODULE
Datasheet	MBM200GR12 Datasheet
Additional preview pages of the MBM200GR12 datasheet.

Low saturation voltage and high speed.
Low turn-OFF switching loss.
Low noise due to build-in free-wheeling diode. (Ultra Soft and Fast recovery Diode (USFD)).
High reliability structure.
Isolated heat sink (terminals to base).

📁 Similar Datasheet

MBM200A6 - IGBT MODULE RANGE WITH SOFT AND FAST (SFD) FREE-WHEELING DIODES (Hitachi Semiconductor)
MBM2147H - MOS 4096-Bit Static RAM (Fujitsu)
MBM2149 - MOS 4096-Bit Static RAM (Fujitsu)
MBM2212-20 - (MBM2212-xx) MOS 1024 BIT NON VOLATILE RANDOM ACCESS MEMORY (Fujitsu Media Devices)
MBM2212-25 - (MBM2212-xx) MOS 1024 BIT NON VOLATILE RANDOM ACCESS MEMORY (Fujitsu Media Devices)
MBM27128-20 - UV Erasable ROM (Fujitsu)
MBM27128-25 - UV Erasable ROM (Fujitsu)
MBM27128-30 - UV Erasable ROM (Fujitsu)

Other Datasheets by Hitachi

Published: Nov 8, 2005 |