MBM200GS12AW Datasheet - Hitachi

MBM200GS12AW IGBT POWER MODULE

IGBT MODU ODULE MBM200GS12AW Silicon N-channel IGBT OUTLINE DRAWING Unit in mm 94 80 16 E2 FEAT RES EATURES High speed and low saturation voltage. low noise due to built-in free-wheeling diode - ultra soft fast recovery diode(USFD). Isolated head sink (terminal to base). 3-M5 2- φ5.6 16 16 G2 4-Fast-on Terminal #110 C1 E2 C2E1 E1 G1 23 23 39.5 φ0.8 7 12 30 C2E1 G2 E2 E2 C1 E1 G1 Weight: 265 (g) TERMINALS ABSOLUTE MAXIMUM RATINGS (Tc=25°C ) Item Collector Emitter.

MBM200GS12AW_Hitachi.pdf