MBM200JS12AW Datasheet - Hitachi

MBM200JS12AW IGBT POWER MODULE

IGBT MODU ODULE MBM200JS12AW Silicon N-channel IGBT OUTLINE DRAWING Unit in mm FEAT RES EATURES High speed and low saturation voltage. low noise due to built-in free-wheeling diode - ultra soft fast recovery diode(USFD). Isolated head sink (terminal to base). 4- φ 6.5 20 108 93 18 20 4-Fast-on Terminal #110 3-M6 C2E1 G2 E2 E1 E2 C1 G1 25 25 46 7 12 36 PDE-M200JS12AW-0 φ 0.8 29 6.5 C2E1 G2 E2 E2 C1 E1 G1 Weight: 470 (g) TERMINALS ABSOLUTE MAXIMUM RATINGS (T.

MBM200JS12AW_Hitachi.pdf