• Part: MBM300GS12AW
  • Description: IGBT Module Silicon N-Channel IGBT
  • Manufacturer: Hitachi Semiconductor
  • Size: 108.17 KB
Download MBM300GS12AW Datasheet PDF
Hitachi Semiconductor
MBM300GS12AW
IGBT MODU ODULE Silicon N-channel IGBT OUTLINE DRAWING Unit in mm FEAT RES EATURES - High speed and low saturation voltage. - low noise due to built-in free-wheeling diode - ultra soft fast recovery diode(USFD). - Isolated head sink (terminal to base). C2E1 G2 E2 E2 C1 E1 G1 Weight: 540(g) TERMINALS ABSOLUTE MAXIMUM RATINGS (Tc=25°C ) Item Collector Emitter Voltage Gate Emitter Voltage Collector Current Forward Current Symbol VCES VGES IC ICp IF IFM Pc Tj Tstg VISO - Unit V V A A W °C °C VRMS N.m (kgf.cm) 1,200 ±20 300 600 300 600 1,700 -40 ~ +150 -40 ~ +125 2,500(AC 1 minute) 2.94(30) 2.94(30) DC 1ms DC 1ms (1) Collector Power Dissipation Junction Temperature Storage Temperature Isolation Voltage Screw Torque Terminals Mounting (2) (3) Notes:(1)RMS Current of Diode 90Arms max. (2)(3)Remended Value 2.45N.m(25kgf.cm) CHARACTERISTICS Item (Tc=25°C ) Symbol Unit Min. Typ. Max. Test Conditions Collector Emitter Cut-Off Current I CES m A 1.0...