* High stability: Load VSWR ≈ 20:1
* Low power control current: 400 µA
* Thin package: 5 mm t Pin Arrangement
* RF-B2 w w .D w 5 t a 1 S a 2 e h 3 t e 5 4 U 4 .c m o 1: Pin 2: VAPC 3: VDD 4: Pout 5: GND w w w .D a S a t e e h U 4 t m o .c PF0031
PF0031
Hitachi
81.58 KB
Mos fet power amplifier module.
w
w
at .D w
h FET Power Amplifier Module for Mobile Phone MOS S a
ADE-208-461 (Z) 1st Edition July 1, 1996
ee
U 4 t
m o .c
PF0031
Application
P.
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