• Part: PF0031
  • Description: MOS FET Power Amplifier Module
  • Manufacturer: Hitachi Semiconductor
  • Size: 81.58 KB
Download PF0031 Datasheet PDF
Hitachi Semiconductor
PF0031
Features - High stability: Load VSWR ≈ 20:1 - Low power control current: 400 µA - Thin package: 5 mm t Pin Arrangement - RF-B2 w w .D w 5 t a S a 2 e h 3 t e 5 4 U 4 .c m o 1: Pin 2: VAPC 3: VDD 4: Pout 5: GND w w w .D a S a t e e h U 4 t m o .c Internal Diagram and External Circuit G GND Pin1 Pin Pin2 VAPC Pin3 VDD Pin4 Pout G GND Z1 C1 FB1 C3 FB2 C2 Z2 Pin VAPC Pout C1 = C2 = 0.01 µF (Ceramic chip capacitor) C3 = 10 µF (Aluminum Electrolyte Capacitor) FB = Ferrite bead BL01RN1-A62-001 (Manufacture: MURATA) or equivalent Z1 = Z2 = 50 Ω (Microstrip line) Absolute Maximum Ratings (Tc = 25°C) Item Supply voltage Supply current APC voltage Input power Operating case temperature Storage temperature Symbol VDD I DD VAPC Pin Tc (op) Tstg Rating 17 3 8 20 - 30 to +100 - 40 to +110 Unit V A V m W °C °C Electrical Characteristics (Tc = 25°C) Item Drain cutoff current Total efficiency Symbol I DS ηT...