Description
The HX2000 and HX2000r gate arrays are performance oriented sea-of-transistor arrays, fabricated on Honeywell’s RICMOS™ IV Silicon On Insulator (SOI) process.
Features
- Fabricated on Honeywell’s Radiation Hardened.
- 0.65 µmLeff RICMOS™ IV SOI Process, HX2000.
- 0.55 µmLeff RICMOS™ IV SOI Process, HX2000r.
- Array Sizes from 40K to 390K Available Gates (Raw).
- HX2000 Supports 5V Core Operation.
- HX2000r www. DataSheet4U. com Supports 3.3V Core Operation
HX2000 HX2000r
FAMILY.
- Total Dose Hardness ≥1x106 rad(SiO2).
- Dose Rate Upset Hardness: ≥1x1010 rad(Si)/sec, HX2000.
- ≥1x109 rad(Si)/sec, HX2000r.
