HY3845
Hooyi
932.37kb
(hy3842 / hy3845) pwm controller. The HY3842D-N/3843D-N/3844D-N/3845D-N, are fixed frequency current mode PWM controller. They are specially designed for OFF
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HY3842 - (HY3842 / HY3845) PWM controller
(Hooyi)
HY3842/43/44/45
DESCRIPTION
The HY3842D-N/3843D-N/3844D-N/3845D-N, are fixed frequency current mode PWM controller. They are specially designed for OF.
HY3843 - (HY3842 / HY3845) PWM controller
(Hooyi)
HY3842/43/44/45
DESCRIPTION
The HY3842D-N/3843D-N/3844D-N/3845D-N, are fixed frequency current mode PWM controller. They are specially designed for OF.
HY3844 - (HY3842 / HY3845) PWM controller
(Hooyi)
HY3842/43/44/45
DESCRIPTION
The HY3842D-N/3843D-N/3844D-N/3845D-N, are fixed frequency current mode PWM controller. They are specially designed for OF.
HY3810B - N-Channel Enhancement Mode MOSFET
(HOOYI)
HY3810P/M/B/PS/PM
Features
• 100V/180A
RDS(ON) = 5.0 m(typ.) @ VGS=10V
• 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices .
HY3810M - N-Channel Enhancement Mode MOSFET
(HOOYI)
HY3810P/M/B/PS/PM
Features
• 100V/180A
RDS(ON) = 5.0 m(typ.) @ VGS=10V
• 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices .
HY3810P - N-Channel Enhancement Mode MOSFET
(HOOYI)
HY3810P/M/B/PS/PM
Features
• 100V/180A
RDS(ON) = 5.0 m(typ.) @ VGS=10V
• 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices .
HY3810PM - N-Channel Enhancement Mode MOSFET
(HOOYI)
HY3810P/M/B/PS/PM
Features
• 100V/180A
RDS(ON) = 5.0 m(typ.) @ VGS=10V
• 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices .
HY3810PS - N-Channel Enhancement Mode MOSFET
(HOOYI)
HY3810P/M/B/PS/PM
Features
• 100V/180A
RDS(ON) = 5.0 m(typ.) @ VGS=10V
• 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices .
HY3003 - N-Channel MOSFET
(HOOYI)
HY3003P/B
N-Channel Enhancement Mode MOSFET
Features
• 30V/100A
RDS(ON)= 3.5mΩ (typ.) @ VGS=10V
• 100% EAS Guaranteed • Super Low Gate Charge • Exce.
HY3003B - N-Channel MOSFET
(HOOYI)
HY3003P/B
N-Channel Enhancement Mode MOSFET
Features
• 30V/100A
RDS(ON)= 3.5mΩ (typ.) @ VGS=10V
• 100% EAS Guaranteed • Super Low Gate Charge • Exce.