BT15T120ANF - Silicon FS Planar IGBT

Huajing Microelectronics

BT15T120ANF Datasheet Preview — Preview of BT15T120ANF PDF

Datasheet Details

Part number	BT15T120ANF
Manufacturer	Huajing Microelectronics
File Size	556.77 KB
Description	Silicon FS Planar IGBT
Datasheet	BT15T120ANF-HuajingMicroelectronics.pdf

BT15T120ANF Product details

Description

Using HUAJING's proprietary trench design and advanced FS(field stop) technology, the 1200V Trench FS-IGBT offers superior conduction and switching performances, high avalanche ruggedness.

Features

l Trench FS Technology, Positive temperature coefficient l Low saturation voltage: VCE(sat), typ = 1.95V @ IC = 15A and TC = 25°C l Extremely enhanced avalanche capability.

📁 BT15T120ANF Similar Datasheet

BT150 - Thyristors logic level (NXP)
BT150-500R - Thyristors logic level (NXP)
BT150-600R - Thyristors logic level (NXP)
BT150-800R - Thyristors logic level (NXP)
BT150M - Thyristors logic level (NXP)
BT150M-500R - Thyristors logic level (NXP)
BT150M-600R - Thyristors logic level (NXP)
BT150M-800R - Thyristors logic level (NXP)

Other Datasheets by Huajing Microelectronics

BT15T120CNF - Silicon FS Planar IGBT
BT15N120ANF - Silicon FS Planar IGBT
BT15N60A0F - Insulated gate bipolar transistor
BT15N60A8F - Insulated gate bipolar transistor
BT15N60A9F - Silicon FS Planar IGBT

Published: Dec 6, 2016 |