• Part: BT15T120ANF
  • Description: Silicon FS Planar IGBT
  • Manufacturer: Huajing Microelectronics
  • Size: 556.77 KB
Download BT15T120ANF Datasheet PDF
Huajing Microelectronics
BT15T120ANF
Description : Using HUAJING's proprietary trench design and advanced FS(field stop) technology, the 1200V Trench FS-IGBT offers superior conduction and switching performances, high avalanche ruggedness. VCES IC Ptot (TC=25℃) VCE(SAT) 1200 15 186 1.95 Features : l Trench FS Technology, Positive temperature coefficient l Low saturation voltage: VCE(sat), typ = 1.95V @ IC = 15A and TC = 25°C l Extremely enhanced avalanche capability Applications: Power switch circuit of induction cooker(IH). Absolute Maximum Ratings (Tc= 25℃ unless otherwise specified): Symbol Parameter VCES Collector-Emitter Voltage VGES Gate- Emitter Voltage ICMa1 IF Collector Current Collector Current @TC = 100 °C Pulsed Collector Current Diode Continuous Forward Current @TC = 100 °C IFM Diode Maximum Forward Current Power Dissipation @ TC = 25°C PD Power Dissipation @TC = 100 °C TJ,Tstg Operating Junction and...