BT30N60ANF Silicon FS Planar IGBT

Huajing Microelectronics

Description

Silicon FS Planar IGBT BT30N60ANF ○R General .
Using HUAJING's proprietary Planar design and advanced FS technology, the 600V FSIGBT offers superior conduction and switching performances, high ava.

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Datasheet Specifications

Part number: BT30N60ANF
Manufacturer: Huajing Microelectronics
File Size: 104.65 KB
Datasheet: BT30N60ANF-HuajingMicroelectronics.pdf
Description: Silicon FS Planar IGBT

Applications

* Aircondition、Welding、UPS… Absolute Maximum Ratings （Tc= 25℃ unless otherwise specified）： Symbol Parameter VCES Collector-Emitter Voltage VGES Gate- Emitter Voltage IC ICMa1 IF Collector Current Collector Current @TC = 100 °C Pulsed Collector Current Diode Continuous Forward Current @TC =

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BT30N60ANF Silicon Planar IGBT Huajing Microelectronics

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