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BT40T60ANFU - Silicon FS Trench IGBT

Description

technology, offering superior conduction and switching performances.

Features

  • l FS Trench Technology, Positive temperature coefficient l Low saturation voltage: VCE(sat), typ= 1.9V @ IC = 40A and TC = 25°C l RoHS Compliant.

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Datasheet Details

Part number BT40T60ANFU
Manufacturer Huajing Microelectronics
File Size 1.40 MB
Description Silicon FS Trench IGBT
Datasheet download datasheet BT40T60ANFU Datasheet
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Full PDF Text Transcription

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Silicon FS Trench IGBT ○R BT40T60 ANFU General Description： VCES 600 V Using HUAJING's proprietary trench design and advanced Field Stop (FS) IC 40 A technology, offering superior conduction and switching performances. Ptot （TC=25℃） 280 W VCE(sat) 1.9 V Features： l FS Trench Technology, Positive temperature coefficient l Low saturation voltage: VCE(sat), typ= 1.
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