BT40T60ANFU Overview
: VCES 600 V Using HUAJING's proprietary trench design and advanced Field Stop (FS) IC 40 A technology, offering superior conduction and switching performances. Ptot (TC=25℃) 280 W VCE(sat) 1.9.
| Part number | BT40T60ANFU |
|---|---|
| Datasheet | BT40T60ANFU-HuajingMicroelectronics.pdf |
| File Size | 1.40 MB |
| Manufacturer | Huajing Microelectronics |
| Description | Silicon FS Trench IGBT |
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: VCES 600 V Using HUAJING's proprietary trench design and advanced Field Stop (FS) IC 40 A technology, offering superior conduction and switching performances. Ptot (TC=25℃) 280 W VCE(sat) 1.9.
See all Huajing Microelectronics datasheets
| Part Number | Description |
|---|---|
| BT40T60ANF | Insulated gate bipolar transistor |
| BT40T60ANFD | Insulated gate bipolar transistor |
| BT40T60AKF | Insulated gate bipolar transistor |
| BT40N60BNF | Silicon FS Planar IGBT |