BT40T60ANFU Description
: VCES 600 V Using HUAJING's proprietary trench design and advanced Field Stop (FS) IC 40 A technology, offering superior conduction and switching performances. Ptot (TC=25℃) 280 W VCE(sat) 1.9.
BT40T60ANFU is Silicon FS Trench IGBT manufactured by Huajing Microelectronics.
| Part Number | Description |
|---|---|
| BT40T60ANF | Insulated gate bipolar transistor |
| BT40T60ANFD | Insulated gate bipolar transistor |
| BT40T60AKF | Insulated gate bipolar transistor |
| BT40N60BNF | Silicon FS Planar IGBT |
: VCES 600 V Using HUAJING's proprietary trench design and advanced Field Stop (FS) IC 40 A technology, offering superior conduction and switching performances. Ptot (TC=25℃) 280 W VCE(sat) 1.9.