BT50N60ANF Datasheet, Igbt, Huajing Microelectronics

BT50N60ANF Features

• Igbt l FS Trench Technology, Positive temperature coefficient l Low saturation voltage: VCE(sat), typ = 1.7V @ IC =50A and TC = 25°C l Extremely enhanced avalanche capability Applications：

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BT50N60ANF

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Huajing Microelectronics

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📄 Datasheet

Description:

Silicon fs planar igbt. Using HUAJING's proprietary Trench design and advanced FS technology, the 600V FS IGBT offers superior conduction and switching perf

BT50N60ANF Application

• Applications Aircondition、Welding、UPS… Absolute Maximum Ratings （Tc= 25℃ unless otherwise specified）： Symbol Parameter VCES Collector-Emitter

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BT50N60ANF

Huajing Microelectronics

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