BT50N60ANF - Silicon FS Planar IGBT

Huajing Microelectronics

BT50N60ANF Datasheet Preview — Preview of BT50N60ANF PDF

Datasheet Details

Part number	BT50N60ANF
Manufacturer	Huajing Microelectronics
File Size	106.23 KB
Description	Silicon FS Planar IGBT
Datasheet	BT50N60ANF-HuajingMicroelectronics.pdf

BT50N60ANF Product details

Description

Using HUAJING's proprietary Trench design and advanced FS technology, the 600V FS IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation.

Features

l FS Trench Technology, Positive temperature coefficient l Low saturation voltage: VCE(sat), typ = 1.7V @ IC =50A and TC = 25°C l Extremely enhanced avalanche capability.

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Published: Dec 6, 2016 |