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CS100N03B4 Datasheet - Huajing Microelectronics

CS100N03B4 Silicon N-Channel Power MOSFET

CS100N03 B4, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve VDSS ID PD(TC=25℃) RDS(ON)Typ 30 100 100 4.0 switching performance and enhance the avalanche energy. The transistor can be used in various power swi.

CS100N03B4 Features

* l Trench FET Power MOSFET l Low ON Resistance(Rdson≤5.3mΩ) l Low Gate Charge (Typical Data:68nC) l Low Reverse transfer capacitances(Typical:300pF) l 100% Single Pulse avalanche energy Test Applications： UPS,DC Motor Control and Class D Amplifier. Absolute（Tc= 25℃ unless otherwise specified）： Sym

CS100N03B4 Datasheet (730.28 KB)

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Datasheet Details

Part number:

CS100N03B4

Manufacturer:

Huajing Microelectronics

File Size:

730.28 KB

Description:

Silicon n-channel power mosfet.

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CS100N03B4 Silicon N-Channel Power MOSFET Huajing Microelectronics

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