Part number:
CS100N03B4
Manufacturer:
Huajing Microelectronics
File Size:
730.28 KB
Description:
Silicon n-channel power mosfet.
CS100N03B4-HuajingDiscreteDevices.pdf
Datasheet Details
CS100N03 B4, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve VDSS ID PD(TC=25℃) RDS(ON)Typ 30 100 100 4.0 switching performance and enhance the avalanche energy.
The transistor can be used in various power swi
CS100N03B4 Features
* l Trench FET Power MOSFET l Low ON Resistance(Rdson≤5.3mΩ) l Low Gate Charge (Typical Data:68nC) l Low Reverse transfer capacitances(Typical:300pF) l 100% Single Pulse avalanche energy Test Applications： UPS,DC Motor Control and Class D Amplifier. Absolute（Tc= 25℃ unless otherwise specified）： Sym
CS100N03B4-HuajingDiscreteDevices.pdf
Datasheet Details
CS100N03B4
Huajing Microelectronics
730.28 KB
Silicon n-channel power mosfet.
📁 Related Datasheet
📌 All Tags