CS150N04A8
Description
：
CS150N04 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is suitable for use as a load switch and PWM applications. The package form is TO-220AB, which accords with the Ro HS standard.
Features
： l Fast Switching l Low ON Resistance(Rdson≤5 mΩ) l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
VDSS ID（Silicon limited current） PD RDS(ON)Typ
40 V 130 A 125 W 3.6 mΩ
Absolute（TC= 25℃ unless otherwise specified）
Symbol Parameter
VDSS
ID IDMa1 VGS EAS a2
TJ，Tstg TL
Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage Avalanche Energy Power Dissipation Derating Factor above 25°C Operating Junction and Storage Temperature Range Maximum...
