CS1N80A1H Datasheet, mosfet equivalent, Huajing Microelectronics

CS1N80A1H Features

• Mosfet l Fast Switching l Low ON Resistance(Rdson≤15Ω) l Low Gate Charge (Typical Data:6.7nC) l Low Reverse transfer capacitances(Typical:2.6pF) l 100% Single Pulse avalanche energy Test Appl

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Part number:

CS1N80A1H

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Huajing Microelectronics

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📄 Datasheet

Description:

Silicon n-channel power mosfet. CS1N80 A1H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction

CS1N80A1H Application

• Applications Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter Rating VDSS ID IDMa1 VG

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CS1N80A1H

Huajing Microelectronics

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