CS3N90A4H

Silicon N-Channel Power MOSFET

Huajing Microelectronics

CS3N90A4H Features

* l Fast Switching l Low ON Resistance(Rdson≤5.5Ω) l Low Gate Charge (Typical Data: 16nC) l Low Reverse transfer capacitances(Typical: 5pF) l 100% Single Pulse avalanche energy Test VDSS ID PD(TC=25℃) RDS(ON)Typ 900 V 3A 75 W 5Ω Applications： Power switch circuit of adaptor and charger. Absolute（

CS3N90A4H General Description

CS3N90 A4H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and high.

CS3N90A4H Datasheet (418.23 KB)

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Datasheet Details

Part number:

CS3N90A4H

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Huajing Microelectronics

File Size:

418.23 KB

Description:

Silicon n-channel power mosfet.

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CS3N90A4H Silicon N-Channel Power MOSFET Huajing Microelectronics

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CS3N90A4H Features

CS3N90A4H General Description

Datasheet Details

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