CS4N70ARHD Datasheet - Huajing Microelectronics

Silicon N-Channel Power MOSFET

CS4N70ARHD Features

* l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 15nC) l Low Reverse transfer capacitances(Typical: 9pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter

CS4N70ARHD General Description

CS4N70 ARHD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization a.

CS4N70ARHD Datasheet (929.60 KB)

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Part number:

CS4N70ARHD

Manufacturer:

Huajing Microelectronics

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929.60 KB

Description:

Silicon n-channel power mosfet.

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CS4N70ARHD Silicon N-Channel Power MOSFET Huajing Microelectronics

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CS4N70ARHD Features

CS4N70ARHD General Description

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