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CS50N20ANH Datasheet - Huajing Microelectronics

CS50N20ANH - Silicon N-Channel Power MOSFET

CS50N20 ANH, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

The transistor can be used in various power switching circuit for system miniaturization a

CS50N20ANH Features

* l Fast Switching l Low ON Resistance(Rdson≤0.045Ω) l Low Gate Charge (Typical Data:150nC) l 100% Single Pulse avalanche energy Test Applications: Power switch circuit of electron ballast and adaptor. Absolute(Tc= 25℃ unless otherwise specified): Symbol Parameter VDSS ID IDMa1 VGS EAS a2 IAS a1 d

CS50N20ANH-HuajingDiscreteDevices.pdf

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Datasheet Details

Part number:

CS50N20ANH

Manufacturer:

Huajing Microelectronics

File Size:

417.81 KB

Description:

Silicon n-channel power mosfet.

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