CS50N20ANH - Silicon N-Channel Power MOSFET
CS50N20 ANH, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for system miniaturization a
CS50N20ANH Features
* l Fast Switching l Low ON Resistance(Rdson≤0.045Ω) l Low Gate Charge (Typical Data:150nC) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of electron ballast and adaptor. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2 IAS a1 d
