CS50N20ANH Datasheet, mosfet equivalent, Huajing Microelectronics

CS50N20ANH Features

• Mosfet l Fast Switching l Low ON Resistance(Rdson≤0.045Ω) l Low Gate Charge (Typical Data:150nC) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of electron ball

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CS50N20ANH

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Huajing Microelectronics

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📄 Datasheet

Description:

Silicon n-channel power mosfet. CS50N20 ANH, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduct

CS50N20ANH Application

• Applications Power switch circuit of electron ballast and adaptor. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1

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CS50N20ANH

Huajing Microelectronics

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