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CS50N20ANH Datasheet - Huajing Microelectronics

CS50N20ANH Silicon N-Channel Power MOSFET

CS50N20 ANH, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization a.

CS50N20ANH Features

* l Fast Switching l Low ON Resistance(Rdson≤0.045Ω) l Low Gate Charge (Typical Data:150nC) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of electron ballast and adaptor. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2 IAS a1 d

CS50N20ANH-HuajingDiscreteDevices.pdf

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Datasheet Details

Part number:

CS50N20ANH

Manufacturer:

Huajing Microelectronics

File Size:

417.81 KB

Description:

Silicon n-channel power mosfet.

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CS50N20ANH CS50N20ANH Silicon N-Channel Power MOSFET Huajing Microelectronics

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