CS830A4RD Datasheet - Huajing Microelectronics

CS830A4RD Silicon N-Channel Power MOSFET

CS830 A4RD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 500 5 75 1.25 performance and enhance the avalanche energy. The transistor can be used in various power switc.

CS830A4RD Features

* l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:14.5nC) l Low Reverse transfer capacitances(Typical:7.5pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter

CS830A4RD-HuajingMicroelectronics.pdf