H5AN4G6NMFR-xxC Datasheet - Hynix Semiconductor

H5AN4G6NMFR-xxC 4Gb DDR4 SDRAM

The H5AN4G8NMFR-xxC and H5AN4G6NMFR-xxC are a 4Gb CMOS Double Data Rate IV (DDR4) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density and high bandwidth. SK hynix 4Gb DDR4 SDRAMs offer fully synchronous operations referenced to both rising and fallin.

4Gb DDR4 SDRAM 4Gb DDR4 SDRAM Lead-Free&Halogen-Free (RoHS Compliant) H5AN4G8NMFR-xxC H5AN4G6NMFR-xxC SK hynix reserves the right to change products or specifications without notice. Rev. 1.2 / Mar.2016 1 Revision History Revision No. 0.1 0.2 0.3 0.4 0.5 1.0 1.1 1.2 History Initial Release Timing Update Additive Latency Correction Speed bin Table Update Typo Correciton IDD update Updated JEDEC Specification Changed Ordering Frequency Changed Speed Bin : 2666Mbps CL9(VK) Updated 2133M.

H5AN4G6NMFR-xxC Features

* and Ordering Information FEATURES

* VDD=VDDQ=1.2V +/- 0.06V

* Fully differential clock inputs (CK, CK) operation

* Differential Data Strobe (DQS, DQS)

* On chip DLL align DQ, DQS and DQS transition with CK transition

* DM masks write data-in at the both risi

H5AN4G6NMFR-xxC Datasheet (463.33 KB)