H5TQ4G63MFR-xxC
Description
The H5TQ4G43MFR-xxC, H5TQC4G83MFR-xxC and H5TQ4G63MFR-xxC are a 4Gb CMOS Double Data Rate III (DDR3) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density and high bandwidth.
Key Features
- VDD=VDDQ=1.5V + - 0.075V
- Fully differential clock inputs (CK, CK) operation
- Differential Data Strobe (DQS, DQS)
- Average Refresh Cycle (Tcase of 0 oC~ 95 oC) - 7.8 µs at 0oC ~ 85 oC - 3.9 µs at 85oC ~ 95 oC
- On chip DLL align DQ, DQS and DQS transition with CK
- DM masks write data-in at the both rising and falling edges of the data strobe
- All addresses and control inputs except data, data strobes and data masks latched on the rising edges of the clock
- Programmable additive latency 0, CL-1, and CL-2 supported
- Programmable burst length 4/8 with both nibble sequential and interleave mode
- BL switch on the fly
