HY27UG164GDM, HY27UG084G2M Datasheet - Hynix Semiconductor

HY27UG164GDM (HY27UGxx Series) 2G-Bit NAND Flash

The HYNIX HY27UG(08/16)4G(2/D)M series is a 512Mx8bit with spare 16Mx8 bit capacity. The device is offered in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. The memory is divided into blocks that can be erased independently so .

w e e Document h Title S / 256Mx16bit) NAND Flash Memory 4Gbit (512Mx8bit a at .D History Revision w w Revision No. 0.0 U 4 t . m o c Preliminary HY27UG(08/16)4G(2/D)M Series 4Gbit (512Mx8bit / 256Mx16bit) NAND Flash History Draft Date May. 13. 2005 Remark Preliminary Initial Draft. 1) Add Errata tWH tWP 25 35 tWC 50 60 0.1 Specification Relaxed value 15 20 May. 23. 2005 1) Correct the Valid Blocks Number. 0.2 Valid Blocks (max) Before After 4,098 4,096 1) Add tRSBY (Table 11) - t.

HY27UG164GDM Features

* 9) Change DC Characteristics (Table 8) - Operating Current ICC1 Typ Before 0.4 After 20 25 Max 40 45 ICC2 Typ 20 25 Max 40 45 ICC3 Typ 20 25 Max 40 45 Sep. 16. 2005 Preliminary 10) Change AC Characteristics - Errata is deleted. tWC Before After 60ns 50ns tWP 35ns 25ns tWH 20ns 15ns - tR is change

HY27UG084G2M_HynixSemiconductor.pdf