HY27US161G1M, HY27US081G1M Datasheet - Hynix Semiconductor

HY27US161G1M, HY27US081G1M, 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash

Preliminary HY27US(08/16)1G1M Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash 1Gb NAND FLASH HY27US081G1M HY27US161G1M This document is a general pr.
and is subject to change without notice.

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HY27US081G1M-HynixSemiconductor.pdf

HY27US161G1M Datasheet Preview — This datasheet PDF includes multiple part numbers: HY27US161G1M, HY27US081G1M. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

HY27US161G1M, HY27US081G1M

Manufacturer:

Hynix Semiconductor

File Size:

312.09 KB

Description:

1Gbit (128Mx8bit / 64Mx16bit) NAND Flash

Note:

This datasheet PDF includes multiple part numbers: HY27US161G1M, HY27US081G1M.
Please refer to the document for exact specifications by model.

Applications

* NAND INTERFACE - x8 or x16 bus width. - Multiplexed Address/ Data - Pinout compatibility for all densities FAST BLOCK ERASE - Block erase time: 2ms (Typ. ) STATUS REGISTER ELECTRONIC SIGNATURE - 1st cycle : Manufacturer Code - 2nd cycle : Device Code SUPPLY VOLTAGE - VCC = 2.7 to 3.6V : HY27USxx1G1M

HY27US161G1M Distributors

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HY27US081G1M 1Gbit 128Mx8bit 64Mx16bit NAND Flash Hynix Semiconductor

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