HY27US161G1M Features
* SUMMARY HIGH DENSITY NAND FLASH MEMORIES - Cost effective solutions for mass storage applications NAND INTERFACE - x8 or x16 bus width. - Multiplexed Address/ Data - Pinout compatibility for all densities FAST BLOCK ERASE - Block erase time: 2ms (Typ.) STATUS REGISTER ELECTRONIC SIGNATURE - 1st cycl
HY27US081G1M-HynixSemiconductor.pdf
Datasheet Details
HY27US161G1M, HY27US081G1M
Hynix Semiconductor
312.09 KB
1gbit (128mx8bit / 64mx16bit) nand flash.
This datasheet PDF includes multiple part numbers: HY27US161G1M, HY27US081G1M.
Please refer to the document for exact specifications by model.
HY27US161G1M Distributor
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