HY29DS163 datasheet, memory equivalent, Hynix Semiconductor

HY29DS163 Features and benefits

n Single Power Supply Operation n n n n n n n n n n n − Read, program, and erase operations from 1.8 to 2.2 V (2.0V ± 10%) − Ideal for battery-powered applications.

HY29DS163 Application

Simultaneous Read/Write Operations − Host system can program or erase in one bank while simultaneously reading from any .

HY29DS163 Description

The HY29DS162/HY29DS163 (HY29DS16x) is a 16 Mbit, 1.8 volt-only CMOS Flash memory organized as 2,097,152 (2M) bytes or 1,048,576 (1M) words. The device is available in 48-pin TSOP and 48-ball FBGA packages. Word-wide data (x16) appears on DQ[15:0] an.

Image gallery

TAGS

📁 Related Datasheet

HY29DS162 - (HY29DS162 / HY29DS163) Simultaneous Read/Write Flash Memory (Hynix Semiconductor)
www..com HY29DS162/HY29DS163 16 Megabit (2M x 8/1M x 16) Super-Low Voltage, Dual Bank, Simultaneous Read/Write, Flash Memory KEY FEATURES .

HY29DS322 - (HY29DS322 / HY29DS323) Simultaneous Read/Write Flash Memory (Hynix Semiconductor)
www..com HY29DS322/HY29DS323 32 Megabit (4M x 8/2M x16) Super-Low Voltage, Dual Bank, Simultaneous Read/Write, Flash Memory KEY FEATURES .

HY29DS323 - (HY29DS322 / HY29DS323) Simultaneous Read/Write Flash Memory (Hynix Semiconductor)
www..com HY29DS322/HY29DS323 32 Megabit (4M x 8/2M x16) Super-Low Voltage, Dual Bank, Simultaneous Read/Write, Flash Memory KEY FEATURES .

HY29DL162 - (HY29DL162 / HY29DL163) Simultaneous Read/Write Flash Memory (Hynix Semiconductor)
www..com HY29DL162/HY29DL163 16 Megabit (2M x 8/1M x16) Low Voltage, Dual Bank, Simultaneous Read/Write Flash Memory KEY FEATURES n Singl.

HY29DL163 - (HY29DL162 / HY29DL163) Simultaneous Read/Write Flash Memory (Hynix Semiconductor)
www..com HY29DL162/HY29DL163 16 Megabit (2M x 8/1M x16) Low Voltage, Dual Bank, Simultaneous Read/Write Flash Memory KEY FEATURES n Singl.

HY29F002T - 2 Megabit (256K x 8)/ 5 Volt-only/ Flash Memory (Hynix Semiconductor)
HY29F002T 2 Megabit (256K x 8), 5 Volt-only, Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirements n.

HY29F002TC-45 - 2 Megabit (256K x 8)/ 5 Volt-only/ Flash Memory (Hynix Semiconductor)
HY29F002T 2 Megabit (256K x 8), 5 Volt-only, Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirements n.

HY29F002TC-55 - 2 Megabit (256K x 8)/ 5 Volt-only/ Flash Memory (Hynix Semiconductor)
HY29F002T 2 Megabit (256K x 8), 5 Volt-only, Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirements n.

HY29F002TC-70 - 2 Megabit (256K x 8)/ 5 Volt-only/ Flash Memory (Hynix Semiconductor)
HY29F002T 2 Megabit (256K x 8), 5 Volt-only, Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirements n.

HY29F002TC-90 - 2 Megabit (256K x 8)/ 5 Volt-only/ Flash Memory (Hynix Semiconductor)
HY29F002T 2 Megabit (256K x 8), 5 Volt-only, Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirements n.

HY29DS163 Datasheet, memory equivalent, Hynix Semiconductor

PDF File Details

HY29DS163 Features and benefits

HY29DS163 Application

HY29DS163 Description