HY57V641620ET Datasheet - Hynix Semiconductor

HY57V641620ET 4-Bank x 1M x 16-Bits SDRAM

and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 1.5 / Feb. 2005 1 m o .c U 4 t e e h S a at .D w w w Synchronous DRAM Memory 64Mbit (4Mx16bit) HY57V641620E(L/S)T(P)-xI Series DESCRIPTION The Hyni.

m o c . 64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O U 4 t e e Document Title h S a Revision at History .D w w w 4Bank x 1M x 16bits Synchronous DRAM Revision No. History First Version Release 1.0 1. Changed tOH: 2.0 > 2.5 [tCK = 7 & 7.5 (CL3) Product] 1.1 1. Changed Input High/Low Voltage (Page 08) 2. Changed DC characteristics (Page 09) - IDD2NS: 18mA -> 15mA - IDD5:210 / 195 / 180mA -> 170 / 160 / 150mA [Speed 200 / 166 / 143 / 133MHz] 3. Changed Clock High / Low pulse width Tim.

HY57V641620ET Features

* Voltage: VDD, VDDQ 3.3V supply voltage All device pins are compatible with LVTTL interface 54 Pin TSOPII (Lead or Lead Free Package) All inputs and outputs referenced to positive edge of system clock Data mask function by UDQM, LDQM

HY57V641620ET_HynixSemiconductor.pdf