HY57V641620ET Datasheet - Hynix Semiconductor

HY57V641620ET, 4-Bank x 1M x 16-Bits SDRAM

m o c .64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O U 4 t e e Document Title h S a Revision at History .D w w w 4Bank x 1M x 16bits Synchronous .
and is subject to change without notice.

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Datasheet Details

Part number:

HY57V641620ET

Manufacturer:

Hynix Semiconductor

File Size:

144.66 KB

Description:

4-Bank x 1M x 16-Bits SDRAM

Features

* Voltage: VDD, VDDQ 3.3V supply voltage All device pins are compatible with LVTTL interface 54 Pin TSOPII (Lead or Lead Free Package) All inputs and outputs referenced to positive edge of system clock Data mask function by UDQM, LDQM

Applications

* which require wide data I/O and high bandwidth. HY57V641620E(L/S)T(P) is organized as 4banks of 1,048,576x16. HY57V641620E(L/S)T(P) is offering fully synchronous operation referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input. The

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HY57V641620ET 4-Bank 16-Bits SDRAM Hynix Semiconductor

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