HY57V641620ET - 4-Bank x 1M x 16-Bits SDRAM

Product Overview

Hynix Semiconductor

Part number	HY57V641620ET
Manufacturer	Hynix Semiconductor
File Size	144.66 KB
Description	4-Bank x 1M x 16-Bits SDRAM
Datasheet	HY57V641620ET Datasheet
Additional preview pages of the HY57V641620ET datasheet.

and is subject to change without notice.

Voltage: VDD, VDDQ 3.3V supply voltage All device pins are compatible with LVTTL interface 54 Pin TSOPII (Lead or Lead Free Package) All inputs and outputs referenced to positive edge of system clock Data mask function by UDQM, LDQM.
Internal four banks operation.
Burst Read Single Write operation Programmable CAS Latency; 2, 3 Clocks.
Auto refresh and self refresh 4096 Refresh cycles / 64m.

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Published: Jan 18, 2006 |