Y27US08121M HY27US08121M

Hynix Semiconductor

Description

HY27SS(08/16)121M Series HY27US(08/16)121M Series 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash Document Title 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash M.
of Device Operations - /CE Don’t Care Enabled(Disabled) -> Sequential Row Read Disabled (Enabled) (Page22) 3) Add the description of System Interface.

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Datasheet Specifications

Part number: Y27US08121M
Manufacturer: Hynix Semiconductor
File Size: 796.67 KB
Datasheet: Y27US08121M_HynixSemiconductor.pdf
Description: HY27US08121M

Applications

* FAST BLOCK ERASE - Block erase time: 2ms (Typ) NAND INTERFACE - x8 or x16 bus width. - Multiplexed Address/ Data www. DataSheet4U. com - Pinout compatibility for all densities STATUS REGISTER ELECTRONIC SIGNATURE SUPPLY VOLTAGE Sequential Row Read OPTION : HY27USXX121M - 3.3V device: VCC = 2.7 t

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