Y27US08121M HY27US08121M Datasheet - Hynix Semiconductor

✔ Y27US08121M Features

SUMMARY
HIGH DENSITY NAND FLASH MEMORIES
- Cost effective solutions for mass storage applications
FAST BLOCK ERASE
- Block erase time: 2ms (Typ)
NAND INTERFACE
- x8 or

✔ Y27US08121M Application

FAST BLOCK ERASE
- Block erase time: 2ms (Typ)
NAND INTERFACE
- x8 or x16 bus width. - Multiplexed Address

PDF File Details

Hynix Semiconductor manufacturer logo

Part number:

Y27US08121M

Manufacturer:

Hynix Semiconductor

File Size:

796.67kb

Download:

📄 Datasheet

Description:

hy27us08121m. of Device Operations - /CE Don’t Care Enabled(Disabled) -> Sequential Row Read Disabled (Enabled) (Page22) 3) Add the description of

📥 Download PDF (796.67kb)

TAGS

Y27US08121M

HY27US08121M

Hynix Semiconductor

📁 Related Datasheet

Y2002KC250 - Pulse Thyristor (IXYS)
WESTCODE An IXYS Company Date:- 15 Oct, 2002 Data Sheet Issue:- 1 Prospective Data Pulse Thyristor Type Y2002KC250 Absolute Maximum Ratin.

Y200CKC250 - Pulse Thyristor (IXYS)
Date:- 18 Nov 2014 Data Sheet Issue:- 2 Pulse Thyristor Type Y200CKC250 Absolute Maximum Ratings VDRM VDSM VRRM VRSM VDC VOLTAGE RATINGS Repetitiv.

Y2010DN - Schottky Barrier Rectifier (Fairchild Semiconductor)
FYP2010DN — Schottky Barrier Rectifier FYP2010DN Schottky Barrier Rectifier Features • Low forward voltage drop • High frequency properties and switc.

Y27US08121M Datasheet, Hy27us08121m, Hynix Semiconductor