Y27US08121M Datasheet - Hynix Semiconductor

Y27US08121M HY27US08121M

of Device Operations - /CE Don’t Care Enabled(Disabled) -> Sequential Row Read Disabled (Enabled) (Page22) 3) Add the description of System Interface Using CE don’t care (Page37) 1) Delete Errata 2) Change Characteristics (3V Product) 0.5 tCRY Before After 60 + tr 70 + tr tREA@ID Read 35 45 Jun. 01..

HY27SS(08/16)121M Series HY27US(08/16)121M Series 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash Document Title 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash Memory Revision History No. www.DataShe et4U.com 0.0 0.1 0.2 0.3 Initial Draft Renewal Product Group Make a decision of PKG information Append 1.8V Operation Product to Data sheet 1) Add Errata tWC Specification 0.4 Relaxed value 50 60 tWH 15 20 tWP 25 40 tRC 50 60 tREH 15 20 tRP 30 40 tREA@ID Read 35 45 Mar.28.2004 Preliminary History Draft Date .

Y27US08121M Features

* SUMMARY HIGH DENSITY NAND FLASH MEMORIES - Cost effective solutions for mass storage applications FAST BLOCK ERASE - Block erase time: 2ms (Typ) NAND INTERFACE - x8 or x16 bus width. - Multiplexed Address/ Data www.DataSheet4U.com - Pinout compatibility for all densities STATUS REGISTER ELECTRONI

Y27US08121M Datasheet (796.67 KB)