H27S4G8F2D Datasheet - Hynix

H27S4G8F2D 4 Gbit (512M x 8 bit) NAND Flash

1.1 Product List6 1.2 Pin description8 1.3 Functional block diagram9 1.4 Address role10 1.5 Command Set11 2 Bus Operations13 2.1 Command Input13 2.2 Address Input13 2.3 Data Input13 2.4 Data Output13 2.5 Write Protect13 2.6 Stand-by13 3 DEVICE OPERATION14 3.1 Page Read14 3.2 Data Handiling Restrict.

APCPCWM_4828539:WP_0000001WP_000000 APCPCWM_4828539:WP_0000001WP_0000001 1 H27(U_S)4G8_6F2D 4 Gbit (512M x 8 bit) NAND Flash 4Gb NAND FLASH H27U4G8_6F2D H27S4G8_6F2D Rev 1.4 / OCT. 2010 1 ba53f20d-240c B34416/177.179.157.84/2010-10-08 10:08 APCPCWM_4828539:WP_0000001WP_000000 APCPCWM_4828539:WP_0000001WP_0000001 1 H27(U_S)4G8_6F2D 4 Gbit (512M x 8 bit) NAND Flash Document Title 4 Gbit (512M x 8 bit) NAND Flash Memory Revision History Revision No. 0.0 1.0 1.1 1.2 1.3 1.4 His.

H27S4G8F2D Features

* SUMMARY DENSITY - 4Gbit: 4096blocks Nand FLASH INTERFACE - NAND Interface - ADDRESS / DATA Multiplexing SUPPLY VOLTAGE - Vcc = 3.0/1.8V Volt core supply voltage for Program, Erase and Read operations. MEMORY CELL ARRAY - X8: (2K + 64) bytes x 64 pages x 4096 blocks - X16: (1k+32) words x 64 pages x

H27S4G8F2D Datasheet (0.96 MB)