H27U8G8T2B Datasheet, Memory, Hynix

H27U8G8T2B Features

• Memory SUMMARY HIGH DENSITY NAND FLASH MEMORIES - Cost effective solutions for mass storage applications ELECTRONIC SIGNATURE - 1st cycle : Manufacturer Code - 2nd cycle : Device Code - 3rd c

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Part number:

H27U8G8T2B

Manufacturer:

Hynix

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736.06kb

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📄 Datasheet

Description:

8 gbit (1024 m x 8 bit) nand flash memory. and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses a

H27U8G8T2B Application

• Applications ELECTRONIC SIGNATURE - 1st cycle : Manufacturer Code - 2nd cycle : Device Code - 3rd cycle : Internal chip number, Cell Type, Number o

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H27U8G8T2B

Hynix

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