Description
table 2) Edit Data Protection texts 3) Add Read ID table 4) Add Marking Information 5) Add Application note 6) Change AC characteristics tCLS tCLH 0.1 Before After 10 0 5 10 tCS 15 0 tCH 5 10 tWP tALS 15 25 10 0 tDS 10 20 tDH 5 10 May.
Features
- 2) Change DC characteristics (Table 9) - Operating Current ICC1 Typ 0.3 Before After 20 15 Max 40 30 ICC2 Typ 20 15 Max 40 30 ICC3 Typ 20 15 Max 40 30 Aug. 19. 2005 Preliminary
3) Correct PKG dimension (TSOP PKG) CP Before After 0.050 0.100
Rev 0.3 / Aug. 2005
2
Preliminary HY27UF(08/16)2G2M Series 2Gbit (256Mx8bit / 128Mx16bit) NAND Flash.
HY27UF082G2M_HynixSemiconductor.pdf